BDX54F
SILICON PNP POWER
DARLINGTON TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
MONOLITHIC DARLINGTON
CONFIGURATION
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX54F is a silicon Epitaxial-Base PNP
power transistor in monolithic Darlington
configuration, mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
INTERNAL SCHEMATIC DIAGRAM
January 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
160
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
160
V
V
EBO
Emitter-base Voltage (I
C
= 0)
5
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current
12
A
I
B
Base Current
0.2
A
P
tot
Total Dissipation at T
c
25
o
C
60
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-220
R
1
Typ. = 10 K
R
2
Typ. = 150
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.08
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-off
Current (I
E
= 0)
V
CE
= 80 V
0.5
mA
I
CBO
Collector Cut-off
Current (I
B
= 0)
V
CB
= 160 V
0.2
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
5
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 50 mA
160
V
V
CE(sat)
Collector-emitter
Saturation Voltage
I
C
= 2 A I
B
=10 mA
2
V
V
BE(sat)
Base-emitter
Saturation Voltage
I
C
= 2 A I
B
=10 mA
2.5
V
h
FE
DC Current Gain
I
C
= 2 A V
CE
= 5 V
I
C
= 3 A V
CE
= 5 V
500
150
V
F
Parallel Diode Forward
Voltage
I
F
= 2 A
2.5
V
h
fe
Small Signal Current
Gain
I
C
= 0.5 A
f = 1MHz V
CE
= 2 V
20
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
.
BDX54F
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BDX54F
3/4
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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BDX54F
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